Journal Publications
IEEE Electron Device Letters, 2021 High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact
J. Mater. Chem. C, 2019, (Cover Highlight) Control of hexagonal boron nitride dielectric thickness by single layer etching
IEEE Electron Device Letters, 2020 Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations
IEEE Transactions on Electron Devices, 2020 Ultralow- k Dielectric With Structured Pores for Interconnect Delay Reduction
IEEE Electron Device Letters, 2019 Interconnect Technology With h-BN-Capped Air-Gaps
- Claude Bernard -
“The joy of discovery is certainly the liveliest that the mind of man can ever feel”
SELECTED PUBLICATIONS
Compound Semiconductor Week (CSW) 2020 Electrostatics of a van-der-Waals Stacked Monolayer MoS2 PN Junction
IEEE International Interconnect Technology Conference (IITC) 2019 Integration of Carbon Nanotube as Via Contact to MoS2
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) 2019 Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact.
IEEE International Electron Devices Meeting 2018 (IEDM) Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance