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Boost p-type MoS2 FET using High Work Function Contacts

Chauson Ma

Apr 24, 20211 min read

Boost p-type MoS2 FET using High Work Function Contacts

2220

Contacting 2D MoS2 using 1D CNT Via Interconnect

Chauson Ma

Jul 20, 20201 min read

Contacting 2D MoS2 using 1D CNT Via Interconnect

360

Control of hexagonal boron nitride dielectric thickness by single layer etching

Chauson Ma

Jun 10, 20201 min read

Control of hexagonal boron nitride dielectric thickness by single layer etching

140

Ultralow-k Dielectric With Structured Pores for Interconnect Delay

Chauson Ma

Jun 10, 20201 min read

Ultralow-k Dielectric With Structured Pores for Interconnect Delay

120

Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations

Chauson Ma

Jun 10, 20201 min read

Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations

120

Emerging Device and System Group

Department of Electronic & Computer Engineering

The Hong Kong University of Science and Technology

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