A unipolar p-type MoS2 field-effect transistors (p-FETs) is demonstrated in this work. The p-FETs are fabricated using high work function Pt as the contact electrode and p-type MoS 2 film as the active channel. The p-FETs, with a channel length of 1-μ m, show an output current of -10μ A/μ m with a drain voltage of -1 V. The Pt electrode, formed by slow electron-beam evaporation, shows a contact barrier height of 0.13 eV. In comparison, a faster deposition rate results in a larger resistance and a higher contact barrier of the Pt electrode. Raman characterization provides certain support for the improved contact interface of the slowly deposited Pt electrode, which may be an essential factor in improving current drive.
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