Contacting 2D MoS2 using 1D CNT Via Interconnect

MoS2 based devices have been extensively explored as a possible solution to technology scaling towards atomic dimension. Scaling down to such dimension will cause high current density (>10^7A/cm2) to interconnects, due to closely packed devices, therefore motivates the use of CNT as interconnect material. Process compatibility of using CNT as contact plugs in CMOS BEOL technology has been demonstrated, where CNT were grown on various Si-based substrates. Nevertheless, CNT contact plugs to MoS2 based devices requires CNT to be grown on a few layers of MoS2 as the substrate, which has never been achieved before. To grow CNT directly on MoS2, a dual-metal catalyst is designed. The resistance of the CNT to MoS2 contact plugs are tested.